Gapless states and current control in strongly distorted gated trilayer graphene

We investigate gated trilayer graphene partially devoid of outer layers and forming a system two trilayers connected by single layer graphene. A difference in the stacking order leads to appearance gapless states, one which is mainly localized layer. demonstrate that changing value gate voltage applied can change slope E(k) this state. As consequence direction current flowing also be changed, effect could useful practical applications.